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MB95430 Datasheet(PDF) 49 Page - fujitsu semiconductor |
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MB95430 Datasheet(HTML) 49 Page - fujitsu semiconductor |
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49 / 56 page  MB95430H Series DS07–12xxx–1E 49 6. Flash Memory Write/Erase Characteristics *1: TA = +25°C, VCC = 5.0 V, 100000 cycles *2: TA = +85°C, VCC = 3.0 V, 100000 cycles *3: This value is converted from the result of a technology reliability assessment. (The value is converted from the result of a high temperature accelerated test using the Arrhenius equation with the average temperature being +85°C). Parameter Value Unit Remarks Min Typ Max Sector erase time (2 Kbyte sector) —0.2*1 0.5*2 s The time of writing 00H prior to erasure is excluded. Sector erase time (16 Kbyte sector) —0.5*1 7.5*2 s The time of writing 00H prior to erasure is excluded. Byte writing time — 21 6100*2 µs System-level overhead is excluded. Erase/write cycle 100000 — — cycle Power supply voltage at erase/ write 3.0 — 5.5 V Flash memory data retention time 20*3 — — year Average TA = +85°C |
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