ST10F276Z5 datasheet(192/239 Pages) STMICROELECTRONICS

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Electrical characteristics

ST10F276Z5

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Input leakage and external circuit

The series resistor utilized to limit the current to a pin (see RL in Figure 47), in combination

with a large source impedance, can lead to a degradation of A/D converter accuracy when

input leakage is present.

Data about maximum input leakage current at each pin is provided in the datasheet (Electri-

cal Characteristics section). Input leakage is greatest at high operating temperatures and in

general decreases by one half for each 10°C decrease in temperature.

Considering that, for a 10-bit A/D converter one count is about 5mV (assuming VAREF =

5 V), an input leakage of 100nA acting though an RL = 50kΩ of external resistance leads to

an error of exactly one count (5mV); if the resistance were 100k

Ω, the error would become

two counts.

Eventual additional leakage due to external clamping diodes must also be taken into

account in computing the total leakage affecting the A/D converter measurements. Another

contribution to the total leakage is represented by the charge sharing effects with the sam-

pling capacitance: CS being substantially a switched capacitance, with a frequency equal to

the conversion rate of a single channel (maximum when fixed channel continuous conver-

sion mode is selected), it can be seen as a resistive path to ground. For instance, assuming

a conversion rate of 250 kHz, with CS equal to 4 pF, a resistance of 1MΩ is obtained (REQ =

1 / fCCS, where fC represents the conversion rate at the considered channel). To minimize

the error induced by the voltage partitioning between this resistance (sampled voltage on

CS) and the sum of RS + RF + RL + RSW + RAD, the external circuit must be designed to

respect the following relation:

The formula above places constraints on external network design, in particular on resistive

path.

A second aspect involving the capacitance network must be considered. Assuming the three

capacitances CF, CP1 and CP2 are initially charged at the source voltage VA (refer to the

equivalent circuit shown in Figure 47), when the sampling phase is started (A/D switch

close), a charge sharing phenomena is installed.

Figure 48.

Charge sharing timing diagram during sampling phase

RS RF RL RSW RAD

REQ

------------------------------------------------------------------------------

⋅

--- LSB

VA1

VA2

VCS

Voltage Transient on CS

∆V < 0.5 LSB

1 < (RSW + RAD) CS << TS

2 = RL (CS + CP1 + CP2)

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