IPP60R299CP_07 datasheet(3/10 Pages) INFINEON

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IPP60R299CP

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1100

Output capacitance

C oss

-60-

Effective output capacitance, energy

C o(er)

-46-

Effective output capacitance, time

C o(tr)

120

Turn-on delay time

t d(on)

-10-

Rise time

t r

-5

Turn-off delay time

t d(off)

-40-

Fall time

t f

-5

Gate Charge Characteristics

Gate to source charge

Q gs

-5

Gate to drain charge

Q gd

7.6

Gate charge total

Q g

-22

Gate plateau voltage

V plateau

5.0

Reverse Diode

Diode forward voltage

V SD

V GS=0 V, I F=6.6 A,

T j=25 °C

0.9

1.2

Reverse recovery time

t rr

300

Reverse recovery charge

Q rr

3.9

µC

Peak reverse recovery current

I rrm

-26-

1) J-STD20 and JESD22

2) Pulse width t

p limited by T j,max

Values

V GS=0 V, V DS=100 V,

f =1 MHz

V DD=400 V,

V GS=10 V, I D=6,6 A,

R G=4,3 Ω

V DD=400 V, I D=6.6 A,

V GS=0 to 10 V

V GS=0 V, V DS=0 V

to 480 V

4) I

SD<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.

V R=400 V, I F=I S,

di F/dt =100 A/µs

5) C

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

6) C

o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

3) Repetitive avalanche causes additional power losses that can be calculated asP

AV=E AR*f.

Rev. 2.2

page 3

2007-10-25

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