IPP60R299CP_07 datasheet(1/10 Pages) INFINEON

Part #	IPP60R299CP

Description	CoolMOS Power Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPP60R299CP

CoolMOS

® Power Transistor

Features

• Lowest figure-of-merit RONxQg

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

Hard switching SMPS topologies

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=4.4 A, V DD=50 V

290

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=4.4 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

Value

11

7

34

±30

96

-55 ... 150

0.44

4.4

50

±20

V DS @ Tj,max

650

V

R DS(on),max

0.299

Ω

Q g,typ

22

nC

Product Summary

PG-TO220

Type

Package

Ordering Code

Marking

IPP60R299CP

PG-TO220

SP000084280

6R299P

Rev. 2.2

page 1

2007-10-25

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