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START499D Datasheet(PDF) 1 Page - STMicroelectronics |
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START499D Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page  June 2010 Doc ID 14496 Rev 4 1/18 18 START499D NPN RF silicon transistor Features ■ High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european directive Description The START499D provide the market with a Si state-of-art RF process. Manufactured with ST 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT-89 for given breakdown voltage (BVCEo). START499D is suitable for a wide range of application up to 1 GHz. Figure 1. Pin connection SOT-89 Emitter Base Emitter Collector Table 1. Device summary Order code Marking Package Packaging START499D D499 SOT-89 Tape and reel www.st.com |
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