Characteristics

STPS30L30C

2/9

Doc ID 5506 Rev 6

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

30

V

Forward rms current

30

A

Average forward current

δ = 0.5

Per diode

Per device

15

30

A

Surge non repetitive forward current

220

A

Peak repetitive reverse current

1

A

Non repetitive peak reverse current

3

A

(1)

Repetitive peak avalanche power

5300

W

(2)

Maximum repetitive peak avalanche

voltage

45

V

(2)

Maximum single pulse peak

avalanche voltage

45

V

Storage temperature range

-65 to + 175

°C

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

1.

For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 12

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3.

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.5

0.8

°C/W

Coupling

0.1

1.

When the diodes 1 and 2 are used simultaneously:

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

1.5

mA

170

350

mA

(1)

Forward voltage drop

0.46

V

0.33

0.37

0.57

0.43

0.5

1.