STPS30L30CT datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STPS30L30C

Characteristics

Doc ID 5506 Rev 6

3/9

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current per diode

versus ambient temperature

(

δ = 0.5)

101214161820

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

100

125

150

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

Rth(j-a)=50°C/W

δ=tp/T

Tamb(°C)

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.001

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(T )

(25°C)

ARM

Figure 6.

Non repetitive surge peak forward

current versus overload duration,

(maximum values per diode)

Figure 7.

Relative variation of thermal

impedance junction to case

versus pulse duration

1E-3

1E-2

1E-1

1E+0

100

125

150

175

200

225

250

IM(A)

Tc=25°C

Tc=110°C

Tc=75°C

t(s)

δ=0.5

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

STPS30L30CT Datasheet(PDF) 3 Page - STMicroelectronics

STPS30L30CT Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL