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CTA2P1N Datasheet(PDF) 2 Page - Diodes Incorporated |
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CTA2P1N Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DS30296 Rev. 9 - 2 2 of 5 www.diodes.com CTA2P1N © Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V Base Cutoff Current IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 30 60 100 100 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ⎯ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Ccb ⎯ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 k Ω Voltage Feedback Ratio hre 0.1 8.0 x 10 -4 Small Signal Current Gain hfe 60 500 ⎯ Output Admittance hoe 1.0 100 μS VCE = -10V, IC = -1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 200 ⎯ MHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS ⎯ ⎯ 1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.0 V VDS = VGS, ID =-250μA VGS = 5.0V, ID = 0.05A Static Drain-Source On-Resistance @ Tj = 25°C @ Tj = 125°C RDS (ON) ⎯ 3.2 4.4 7.5 13.5 Ω VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 22 50 pF Output Capacitance Coss ⎯ 11 25 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Notes: 5. Short duration pulse test used to minimize self-heating effect. |
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