DS30296 Rev. 9 - 2

4 of 5

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CTA2P1N

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0

50

100

25

50

75

100 125

150

175 200

T , AMBIENT TEMPERATURE (°C)

Fig. 7 Max Power Dissipation vs.

Ambient Temperature (Total Device)

A

150

200

0

2N7002 Section

0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 8 On-Region Characteristics (2N7002)

DS

V

= 10V

9.0V

8.0V

7.0V

6.5V

6.0V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.0/1.0V

GS

5.5V

5.0V

0

1

2

3

4

5

00.2

I , DRAIN CURRENT (A)

Fig. 9 On-Resistance vs. Drain Current (2N7002)

D

V

= 5.0V

GS

T = 25 C

j

°

V

= 10V

GS

6

7

0.4

0.6

0.8

1.0

1.0

1.5

2.0

2.5

3.0

-55

-30

-5

20

45

70

95

120 145

T , JUNCTION TEMPERATURE ( C)

Fig. 10 On-Resistance vs. Junction Temperature (2N7002)

j

°

V

= 10V,

I = 200mA

GS

D

0

V , GATE TO SOURCE VOLTAGE (V)

Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)

GS

I = 50mA

D

I = 500mA

D

1

2

3

4

5

6

02

4

6

8

10

12

14

16

18