DMN5/L06VK/L06VAK/010VAK

Document number: DS30769 Rev. 8 - 2

1 of 6

www.diodes.com

January 2010

© Diodes Incorporated

DMN5/L06VK/L06VAK/010VAK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

Very Low Gate Threshold Voltage, 1.0V max

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 2)

•

Halogen and Antimony Free

•

"Green" Device (Note 3)

•

ESD Protected up to 2kV

Mechanical Data

•

Case: SOT-563

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram

•

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 5

•

Ordering Information: See Page 5

•

Weight: 0.006 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

50

V

50

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Pulsed

280

1.5

mA

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

250

mW

Thermal Resistance, Junction to Ambient (Note 1)

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-563

TOP VIEW

ESD protected up to 2kV

DMN5L06VK

DMN5L06VAK

DMN5010VAK

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1

D

1

D

2

S

2

S

1

G

2

S

1

D

1

D

2

S

2

G

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G

2