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DMN5 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN5
Description  DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN5 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
2 of 6
www.diodes.com
January 2010
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
50
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
@ TC = 25°C
IDSS
⎯
⎯
60
nA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
1
500
50
µA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.49
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
⎯
⎯
⎯
3.0
2.5
2.0
Ω
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.4
⎯
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|Yfs|
200
⎯
⎯
mS
VDS =10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
⎯
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
5.0
pF
Notes:
4. Short duration pulse test used to minimize self-heating effect.
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS



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