DMN26D0UT

Document number: DS31854 Rev. 2 - 2

1 of 6

www.diodes.com

September 2009

© Diodes Incorporated

DMN26D0UT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance:

•

3.0

Ω @ 4.5V

•

4.0

Ω @ 2.5V

•

6.0

Ω @ 1.8V

•

10

Ω @ 1.5V

•

Very Low Gate Threshold Voltage, 1.0V max

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

ESD Protected Gate

•

Lead, Halogen, and Antimony Free By Design/RoHS

Compliant (Note 2)

•

"Green" Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-523

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram

•

Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.002 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

20

V

Gate-Source Voltage

±10

V

Drain Current (Note 1)

230

mA

Pulsed Drain Current

805

mA

Total Power Dissipation (Note 1)

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

417

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

TOP VIEW

EQUIVALENT CIRCUIT

TOP VIEW

Source

Gate

Protection

Diode

Gate

Drain

G

S

D

ESD PROTECTED

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