DMN26D0UT

Document number: DS31854 Rev. 2 - 2

2 of 6

www.diodes.com

September 2009

© Diodes Incorporated

DMN26D0UT

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

500

nA

Gate-Body Leakage

⎯

⎯

±1

±500

±100

μA

nA

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.5

⎯

1.0

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

⎯

1.8

2.4

2.9

3.7

5.4

3.0

4.0

6.0

10.0

15.0

Ω

Forward Transconductance

⎯

242

⎯

mS

Source-Drain Diode Forward Voltage

0.5

⎯

1.0

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

14.1

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

2.9

⎯

pF

Reverse Transfer Capacitance

⎯

1.6

⎯

pF

Turn-On Delay Time

⎯

3.8

⎯

ns

Rise Time

⎯

7.9

⎯

Turn-Off Delay Time

⎯

13.4

⎯

Fall Time

⎯

15.2

⎯

Notes:

4. Short duration pulse test used to minimize self-heating effect.

5. Switching characteristics are independent of operating junction temperature.

0

0.5

1

1.5

2

2.5

3

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8V

GS

V

= 2.5V

GS

V

= 1.5V

GS

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

0

0.1

0.2

0.3

0.4

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 10V

DS