DMN2041LSD

Document number: DS31964 Rev. 2 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated

DMN2041LSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

-

1.2

V

Static Drain-Source On-Resistance

-

19

28

mΩ

25

41

Forward Transfer Admittance

-

6

-

S

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

-

550

-

pF

f = 1.0MHz

Output Capacitance

-

88

-

Reverse Transfer Capacitance

-

81

-

Gate Resistance

-

1.34

-

Ω

Total Gate Charge (10V)

-

15.6

-

nC

Total Gate Charge (4.5V)

-

7.2

-

nC

Gate-Source Charge

-

1.0

-

Gate-Drain Charge

-

1.9

-

Turn-On Delay Time

-

4.69

-

ns

Turn-On Rise Time

-

13.19

-

Turn-Off Delay Time

-

22.10

-

Turn-Off Fall Time

-

6.43

-

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

= 1.5V

GS

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.0V

GS

V

= 3.0V

GS

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A