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MPC8360E Datasheet(PDF) 22 Page - Freescale Semiconductor, Inc |
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MPC8360E Datasheet(HTML) 22 Page - Freescale Semiconductor, Inc |
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22 / 108 page ![]() MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 4 22 Freescale Semiconductor DDR and DDR2 SDRAM Table 17 provides the DDR capacitance when GVDD(typ) = 2.5 V. 6.2 DDR and DDR2 SDRAM AC Electrical Characteristics This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface. 6.2.1 DDR and DDR2 SDRAM Input AC Timing Specifications Table 18 provides the input AC timing specifications for the DDR2 SDRAM interface when GVDD(typ) = 1.8 V. Table 19 provides the input AC timing specifications for the DDR SDRAM interface when GVDD(typ) = 2.5 V. Table 17. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ, DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V. Table 18. DDR2 SDRAM Input AC Timing Specifications for GVDD(typ) = 1.8 V At recommended operating conditions with GVDD of 1.8 V ± 5%. Parameter Symbol Min Max Unit Notes AC input low voltage VIL —MVREF – 0.25 V — AC input high voltage VIH MVREF + 0.25 — V — Table 19. DDR SDRAM Input AC Timing Specifications At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol Min Max Unit Notes AC input low voltage VIL —MVREF – 0.31 V — AC input high voltage VIH MVREF + 0.31 — V — Note: 1. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0 ≤ n ≤ 7) or ECC (MECC[{0...7}] if n = 8). |
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