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ZXMC3F31DN8 Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZXMC3F31DN8 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 11 page ![]() Issue 1 - September 2008 1 © Diodes Incorporated 2008 www.zetex.com www.diodes.com ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 Q1 30 12.9 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 Q2 -30 12.7 0.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions. Features • Low on-resistance • 4.5V gate drive capability • Low profile SOIC package Applications • DC-DC Converters • SMPS • Load switching switches • Motor control • Backlighting Ordering information Device marking ZXMC 3F31 Device Reel size (inches) Tape width (mm) Quantity per reel ZXMC3F31DN8TA 7 12 500 D2 S2 G2 D1 Q1 N-Channel Q2 P-Channel S1 G1 D1 S1 G1 S2 G2 Top view N P D1 D2 D2 |
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