ZXMC3F31DN8 datasheet(4/11 Pages) DIODES

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ZXMC3F31DN8

Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown

voltage

V(BR)DSS

ID = 250μA, VGS=0V

Zero Gate voltage Drain

current

IDSS

0.5

µA

VDS=30V, VGS=0V

Gate-Body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-Source threshold

voltage

VGS(th)

1.0

3.0

ID= 250μA, VDS=VGS

Static Drain-Source

on-state resistance

(*)

RDS(on)

0.024

0.039

Ω

VGS= 10V, ID= 7.0A

VGS= 4.5, ID= 6.0A

Forward

Transconductance

(*) (†)

gfs

16.5

VDS= 15V, ID= 7.0A

Dynamic

(†)

Input capacitance

Ciss

608

Output capacitance

Coss

132

Reverse transfer

capacitance

Crss

VDS= 15V, VGS=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

td(on)

2.9

Rise time

3.3

Turn-off delay time

td(off)

Fall time

VDD= 15V, VGS=10V

ID= 1A

RG ≅ 6.0Ω,

Total Gate charge

12.9

Gate-Source charge

Qgs

2.5

Gate-Drain charge

Qgd

2.52

VDS= 15V, VGS= 10V

ID= 7A

Source–Drain diode

Diode forward voltage

(*)

VSD

0.82

1.2

IS= 1.7A,VGS=0V

Reverse recovery time

(‡)

trr

Reverse recovery charge

(‡)

Qrr

4.8

IS= 2.2A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

Issue 1 - September 2008

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