ZXT849K datasheet(4/6 Pages) DIODES

4 / 6 page

ZXT849K

SEMICO NDUC TORS

ISSUE 2 - DECEMBER 2003

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

125

IC=100 A

Collector-emitter breakdown voltage

BVCER

125

IC=1 A, RBE= 1k

Collector-emitter breakdown voltage

BVCEO

IC=10mA*

Emitter-base breakdown voltage

BVEBO

IE=100 A

Collector cut-off current

ICBO

VCB=70V

Collector cut-off current

ICER

VCB=70V, RBE= 1k

Emitter cut-off current

IEBO

VEB=6V

Collector-emitter saturation voltage

VCE(SAT)

115

230

180

280

IC=0.5A, IB=20mA*

C=1A, IB=20mA*

C=2A, IB=20mA*

C=7A, IB=350mA*

Base-emitter saturation voltage

VBE(SAT)

1.04

1.15

IC=7A, IB=350mA*

Base-emitter turn-on voltage

VBE(ON)

0.93

1.1

IC=7A, VCE=1V*

Static forward current transfer ratio

HFE

100

190

200

165

300

IC=10mA, VCE=1V*

C=1A, VCE=1V*

C=7A, VCE=1V*

C=20A, VCE=2V*

Transition frequency

100

MHz IC=100mA, VCE=10V

f=50MHz

Output capacitance

COBO

VCB=10V, f=1MHz*

Switching times

tON

tOFF

630

IC=1A, VCC=10V,

IB1=IB2=100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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