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ZXTD720MC Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTD720MC
Description  DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTD720MC Datasheet(HTML) 2 Page - Diodes Incorporated

  ZXTD720MC Datasheet HTML 1Page - Diodes Incorporated ZXTD720MC Datasheet HTML 2Page - Diodes Incorporated ZXTD720MC Datasheet HTML 3Page - Diodes Incorporated ZXTD720MC Datasheet HTML 4Page - Diodes Incorporated ZXTD720MC Datasheet HTML 5Page - Diodes Incorporated ZXTD720MC Datasheet HTML 6Page - Diodes Incorporated ZXTD720MC Datasheet HTML 7Page - Diodes Incorporated  
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ZXTD720MC
Document Number DS31935 Rev. 2 - 2
2 of 7
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD720MC
Maximum Ratings
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-7.5
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current (Notes a and b)
IC
-3
A
Base Current
IB
-1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = 25°C (Notes a and f)
Linear Derating Factor
PD
1.5
12
W
mW/
°C
Power Dissipation at TA = 25°C (Notes b and f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
°C
Power Dissipation at TA = 25°C (Notes c and f)
Linear Derating Factor
PD
1
8
W
mW/
°C
Power Dissipation at TA = 25°C (Notes d and f)
Linear Derating Factor
PD
1.13
9
W
mW/
°C
Power Dissipation at TA = 25°C (Notes d and g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
°C
Power Dissipation at TA = 25°C (Notes e and g)
Linear Derating Factor
PD
3
24
W
mW/
°C
Junction to Ambient (Notes a and f)
RθJA
83.3
°C/W
Junction to Ambient (Notes b and f)
RθJA
51
°C/W
Junction to Ambient (Notes c and f)
RθJA
125
°C/W
Junction to Ambient (Notes d and f)
RθJA
111
°C/W
Junction to Ambient (Notes d and g)
RθJA
73.5
°C/W
Junction to Ambient (Notes e and g)
RθJA
41.7
°C/W
Junction Temperature
TJ
150
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.



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