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MA4SPS421, MA4SPS422

Rev. V7

MA4SPS42X Series

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

 Surface Mount

 No Wire Bonding Required

 Rugged Silicon-Glass Construction

 Silicon Nitride Passivation

 Polymer Scratch Protection

 Low Parasitic Capacitance and Inductance

 Higher Average and Peak Power Handling

 RoHS Compliant* and 260º Reflow Compatible

Description

This device is a Silicon-Glass PIN diode chip

fabricated with M/A-COM Technology Solutions

silicon pedestals embedded in a low loss, low dis-

persion glass. The diode is formed on the top of one

pedestal and connections to the backside of the

device are facilitated by making the pedestal side-

walls electrically conductive. Selective backside

metallization is applied producing a surface mount

device.

This

vertical

topology

provides

for

exceptional heat transfer. The topside is fully

encapsulated with silicon nitride and has an

additional polymer layer for scratch and impact

protection.

These

protective

coatings

prevent

damage to the junction and the anode air-bridge

during handling and assembly.

Applications

These surmount devices are suitable for usage in

moderate incident power (10W C.W.) or higher

incident peak power (500W) series, shunt, or

series-shunt switches. Lower parasitic inductance,

0.1 to 0.2nH, and excellent RC constant (0.45pS),

make the devices ideal for higher frequency switch

elements compared to their plastic device

counterparts.

INCHES

MM

MIN.

MAX.

MIN.

MAX.

A

0.040

0.042

1.025

1.075

B

0.021

0.023

0.525

0.575

C

0.004

0.008

0.102

0.203

D

0.013

0.015

0.325

0.375

E

0.011

0.013

0.275

0.325

F

0.013

0.015

0.325

0.375

G

0.019

0.021

0.475

0.525

DIM

Parameter

Absolute Maximum

Forward Current

250mA

Reverse Voltage

-200V

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Junction Temperature

+175°C

Dissipated Power

( RF & DC )

1.8W

Mounting Temperature

+280°C for 30 seconds

(unless otherwise specified)

MA4SPS421

MA4SPS422

1. Backside metal: 0.1 µM thick.

2. Yellow hatched areas indicate backside ohmic gold

contacts.

3. All devices have the same outline dimensions (A to G).

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.