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2SA684-x-AB3-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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2SA684-x-AB3-R Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page  2SA684 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R211-006.C TYPICAL CHARACTERISTICS(Cont.) Collector to Emitter Voltage vs. Base to Emitter Resistance 100 Base to Emitter Resistance, RBE (KΩ) 0 -40 -60 -80 -100 -120 -20 0.1 0.3 13 10 30 IC=-10mA Ta=25℃ VCE=-10V 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) 1 10 10 2 10 3 10 4 Collector to Emitter Current vs. Ambient Temperature Area Of Safe Operation (ASO) -100 Collector To Emitter Voltage, VCE (V) -0.001 -0.01 -0.1 -1 -3 -10 -0.003 -0.1 -0.3 -1 -3 -10 -30 -0.03 -0.3 Single Pulse Ta=25℃ ICP t=1s t=10ms |
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