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7N65L-TQ2-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N65L-TQ2-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 7N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-104.Ba ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time tRR 320 ns Reverse Recovery Charge QRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) 2.4 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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