MRF8P20140WHR3 datasheet(2/15 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF8P20140WHR3 MRF8P20140WHSR3

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz

Case Temperature 96°C, 130 W CW(2),28Vdc,IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz

RθJC

0.68

0.40

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (3)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

On Characteristics (3,4)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 200 μAdc)

VGS(th)

1.1

1.8

2.6

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDA = 500 mAdc)

VGSA(Q)

—

2.6

—

Vdc

Fixture Gate Quiescent Voltage (5)

(VDD =28 Vdc, IDA = 500 mAdc, Measured in Functional Test)

VGGA(Q)

4.5

5.2

6.0

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =2 Adc)

VDS(on)

0.1

0.2

0.3

Vdc

Functional Tests (4,6,7) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 500 mA, VGSB =1.2 Vdc,

Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Power Gain

Gps

15.0

16.0

18.0

Drain Efficiency

ηD

37.5

41.2

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

7.3

7.7

—

Adjacent Channel Power Ratio

ACPR

—

--31.9

--29.5

dBc

Typical Broadband Performance (7) — (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 500 mA, VGSB =1.2 Vdc,

Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR

measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

1880 MHz

16.0

42.8

8.0

--31.0

1920 MHz

16.0

43.7

8.1

--32.6

2025 MHz

15.9

42.0

8.1

--31.2

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

3. Each side of device measured separately.

4. VDDA and VDDB must be tied together and powered by a single DC power supply.

5. VGG =2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

6. Part internally matched both on input and output.

7. Measurement made with device in a Symmetrical Doherty configuration.

(continued)

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