CZD5103 datasheet(1/4 Pages) SECOS

Part #	CZD5103

Description	NPN Epitaxial Planar Silicon Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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CZD5103

NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente

23-Apr-2010 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



DESCRIPTION

The CZD5103 is designed for high speed switching applications.

FEATURES



Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A



High speed switching, typically Tf = 0.1s at IC= 3A



Wide SOA



Complements to CZD1952

MARKING

SWITCHING TIME TEST CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

100

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

5

V

Collector Current (DC)

IC

6

A

Collector Current (Pulse)

IC

20

A

Total Device Dissipation

(TA=25°C)

PD

1

W

Total Device Dissipation

(TC=25°C)

PD

10

W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55 ~ 150

℃

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

6.4

6.8

J

2.30 REF.

B

5.20

5.50

K

0.70

0.90

C

2.20

2.40

M

0.50

1.1

D

0.45

0.58

N

0.9

1.6

E

6.8

7.3

O

0

0.15

F

2.40

3.0

P

0.43

0.58

G

5.40

6.2

H

0.8

1.20

A

C

D

N

O

P

G E

F

H

K

J

M

B

D-Pack (TO-252)

5103



1

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