CZD5103 datasheet(2/4 Pages) SECOS

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CZD5103

NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente

23-Apr-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ. Max. Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

100

IC=50　A, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE=50　A, IC=0

Collector cut-off current

ICBO

VCB=100V, IE=0

Emitter cut-off current

IEBO

VEB=5V, IC=0

Collector-emitter saturation voltage

*VCE(sat)1

0.15

0.3

IC=3A, IB=0.15A

*VCE(sat)2

0.5

IC=4A, IB=0.2A

Base-emitter saturation voltage

*VBE(sat)1

1.2

IC=3A, IB=0.15A

*VBE(sat)2

1.5

IC=4A, IB=0.2A

*DC current gain

*hFE1

120

270

VCE=2V, IC=1A

*hFE2

VCE=2V, IC=3A

Transition frequency

210

MHz

VCB=10V, IE=-0.5A,

f=30MHz

Output Capacitance

COB

VCE=10V, IE=0, f=1MHz

Turn-On Time

TON

0.3

S

IC=3A, RL=10Ω,

IB1=-IB2=0.15A, VCC=30V

Storage Time

TSTG

1.5

Fall Time

0.1

0.3

*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%

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