APT5012WVR datasheet(1/6 Pages) MICROSEMI

Part #	APT5012WVR

Description	N-CHANNEL MOSFET

PDF	6 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

N-CHANNEL MOSFET

T4-LDS-0181 Rev. 1 (101414)

Page 1 of 6

DEVICES

LEVELS

APT5012WVR

POWER MOS V®

500V

40A

0.120Ω

ABSOLUTE MAXIMUM RATINGS (T

C = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Drain – Source Voltage

VDS

500

Vdc

Gate – Source Voltage

VGS

± 30

Vdc

Gate – Source Transient

VGSM

± 40

Vdc

Continuous Drain Current

TC = +25°C

ID

40

Adc

Pulsed Drain Current

TC = +25°C

IDM

160

Adc

Total Power Dissipation

TC = +25°C

Linear Derating Factor

PD

450 (1)

3.6

W

W/°C

Drain to Source On State Resistance

Rds(on)

0.120 (2)

Ω

Operating & Storage Junction Temperature Range

Top, Tstg

-55 to +150

°C

Lead temperature: 0.063” from Case for 10 Se.

TL

300

°C

IAR

40 (1)

Adc

Avalanche Current (3) (Repetitive/ Non-repetitive)

EAR

50 (1)

mJ

EAS

2500 (4)

mJ

Note: (1) Repetitive Rating: Pulse width limited by maximum junction temperature.

(2) Pulse Test: Pulse width < 380µS, Duty Cycle < 2%.

(3) MIL-STD-750 Method 3471.

(4) Starting Tj = +25°C, L = 3.13mH, RG = 25Ω, Peak IL = 40A.

ELECTRICAL CHARACTERISTICS (T

A = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µAdc

V(BR)DSS

500

Vdc

Gate-Source Voltage (Threshold)

VDS = VGS = ±30, ID = 2.5mA

VGS(th)

2.0

4.0

Vdc

Gate Current

VGS = ±30V, VDS = 0V

IGSS

±100

nAdc

Drain Current

VGS = 0V, VDS = 500V

VGS = 0V, VDS = 400V, TC = +125°C

IDSS1

IDSS2

25

0.25

µAdc

Diode Forward Voltage

VGS = 0V, ID = 31.5A pulsed

VSD

1.3

Vdc

TO-267

D

S

G

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