APT5012WVR datasheet(2/6 Pages) MICROSEMI

2 / 6 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0181 Rev. 1 (101414)

Page 2 of 6

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

TYP

Max.

Unit

Capacitance:

Ciss

Coss

Crss

Input capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f =1 MHz

7400

1000

380

8900

1400

570

Gate Charge:

Qg(on)

Qgs

Qgd

On-State Gate Charge (3)

Gate to Source Charge

Gate to Drain (“Miller”) Charge

VGS = 10V

VDS = 250V

ID = 40A

312

127

470

190

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

TYP

Max.

Unit

Switching time tests:

Turn-on delay time

Rinse time

Turn-off delay time

Fall time

ID = 40A

VGS = 15Vdc

VDD = 250Vdc

RG = 0.6Ω

td(on)

td(off)

165

Continuous Source Current (Body Diode)

Pulsed Source Current (1) (Body Diode)

ISM

160

Diode Forward Voltage (2)

VGS = 0V, IS = -40A

VSD

1.3

Reverse Recovery Time

di/dt ≤ 100A/µs

IS = -40A

trr

620

Reverse Recovery Charge

di/dt ≤ 100A/µs

IS = -40A

Qrr

14.7

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

TYP

Max.

Unit

Junction to Case

RθJC

0.28

°C/W

Junction to Ambient

RθJA

°C/W

(1) Repetitive Rating: Pulse width limited by maximum junction temperature.

(2) Pulse Test: Pulse width < 380µS, Duty Cycle < 2%

(3) See MIL-STD-750 method 3471

(4) Starting Tj = +25°C, L = 3.13mH, RG = 25Ω, Peak IL = 40A

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