Elektronische Bauelemente

MMBT491

NPN Silicon

General Purpose Transistor

01-June-2002 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low equivalent on-resistance

MARKING:

491

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

80

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

1

A

Collector Power Dissipation

500

mW

Junction & Storage temperature

150, -55~150

°C

ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

80

-

V

Collector-emitter breakdown voltage

1

60

-

V

Emitter-base breakdown voltage

5

-

V

Collector cut-off current

-

0.1

μA

Emitter cut-off current

-

0.1

μA

100

-

1

100

300

1

80

-

DC current gain

1

30

-

1

-

0.25

V

Collector-emitter saturation voltage

1

-

0.5

V

1

-

1.1

V

Base-emitter saturation voltage

1

-

1

V

Transition frequency

150

MHz

Output Capacitance

-

10

pF

Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%.

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3