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MMBT491 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT491 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() Elektronische Bauelemente MMBT491 NPN Silicon General Purpose Transistor 01-June-2002 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES 10A 1A 10mA 100mA 1mA VCE(sat) vs IC IC- Collector Current IC-Collector Current VBE(sat) vs IC 0 0.2 100mA 10mA 0.4 0.6 0.8 1.0 10A 1A hFE vs IC IC-Collector Current 1mA 100mA 10mA 10A 1A 100 0 300 200 400 10mA 1mA IC- Collector Current VBE(on) vs IC 100mA 1A 10A 0.6 0.8 1.0 1.2 0.4 0.2 0 IC-Collector Current VCE(sat) vs IC 1mA 0 0.1 100mA 10mA 0.2 0.3 0.4 0.5 10A 1A 10 1 0.1 Safe Operat ing Area VCE - Collector Emitter Voltage (V) 0.1V 10V 100V 1V 0 1mA 0.01 0.6 0.1 0.2 0.3 0.4 0.5 0.6 IC / IB = 10 + 25 C IC / IB = 50 IC / IB = 10 IC / IB = 10 - 55 C + 25 C + 100 C - 55 C + 25 C + 100 C - 55 C + 25 C + 100 C + 25 C - 55 C + 100 C VCE = 5 V VCE = 5 V DC 1 s 100 ms 10 ms 1 ms 100 s |
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