STT3962N

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

20-Aug-2010 Rev. B

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density

energy, making this device ideal for use in power management

circuitry. Typical applications are DC-DC converters, power

management in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES





Miniature TSOP-6 surface mount package saves board space.

PRODUCT SUMMARY

PRODUCT SUMMARY

60

2.3

2.1

Parameter

Symbol

Ratings

Unit

Maximum

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current

a

2.3

A

1.9

Pulsed Drain Current

b

8

A

Continuous Source Current (Diode Conduction)

a

1.05

A

Power Dissipation

a

1.15

W

0.7

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Unit

Maximum Junction to Ambient

a

t ≦ 10 sec

100

°C / W

Steady State

166

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature.

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.10 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

TSOP-6

B

L

F

H

C

J

D G

K

A

E

1

23

4

5

6

G

G

S

S

D

D