STT3962N datasheet(2/4 Pages) SECOS

2 / 4 page

STT3962N

N-Channel Enhancement Mode Mos.FET

2.3 A, 60 V, RDS(ON) 0.153 

Elektronische Bauelemente

20-Aug-2010 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID= 250uA

Gate-Body Leakage Current

IGSS

100

VDS= 0V, VGS= 20V

Zero Gate Voltage Drain Current

IDSS

VDS= 48V, VGS= 0V

VDS= 48V, VGS=0 V, TJ= 55°C

On-State Drain Current

ID(on)

VDS = 5V, VGS= 10 V

Drain-Source On-Resistance

RDS(ON)

0.153

Ω

VGS= 10V, ID= 2.3A

0.185

VGS= 4.5V, ID= 2.1A

Forward Transconductance

gfs

VDS= 5V, ID= 2.3A

Diode Forward Voltage

VSD

0.80

IS= 1.05A, VGS= 0V

DYNAMIC

Total Gate Charge

VDS= 15V, VGS= 4.5V,

ID= 2.3A

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

1.0

Turn-on Delay Time

Td(on)

VDD= 15V, VGS= 4.5V,

RGEN= 15, ID= 1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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