BD706 datasheet(2/2 Pages) ISC

Part #	BD706

Description	isc Silicon PNP Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD706

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -100mA; IB= 0

-45

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -4A; VCE= -4V

-1.5

ICEO

Collector Cutoff Current

VCE= -22V; IB= 0

-1.0

ICBO

Collector Cutoff Current

VCB= -45V; IE= 0

VCB= -45V; IE= 0; TC= 150℃

-0.1

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1.0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -2V

400

hFE-2

DC Current Gain

IC= -2A; VCE= -2V

hFE-3

DC Current Gain

IC= -4A; VCE= -4V

150

hFE-4

DC Current Gain

IC= -10A; VCE= -4V

Current-Gain—Bandwidth Product

IC= -0.3A; VCE= -3V

MHz

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