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BD706 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD706
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD706 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD706
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -45V(Min.)
·Complement to Type BD705
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45
V
VCES
Collector-Emitter Voltage VBE= 0
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IB
B
Base Current-Continuous
-5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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