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BUL742 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUL742 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUL742 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 12 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICES Collector cut-off current VCE=900V; VBE=0 100 μA hFE-1 DC current gain IC=250mA ; VCE=5V 35 70 hFE-2 DC current gain IC=2A ; VCE=5V 10 35 Switching times resistive load ts Storage time 11 μs tf Fall time VCC=125V ,IC=0.5A IB1=-IB2=45mA tp=300μs 0.25 μs |
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