BUL742 datasheet(1/3 Pages) ISC

Part #	BUL742

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL742

DESCRIPTION

·

·With TO-220C package

·High voltage capability

·Very high switching speed

APPLICATIONS

·Electronic ballast for fluorescent

lighting

·Switch mode power supplies

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

900

V

VCEO

Collector-emitter voltage

Open base

400

V

VEBO

Emitter-base voltage

Open collector

12

V

IC

Collector current

4

A

ICM

Collector current-Peak (tp<5 ms)

8

A

IB

Base current

2

A

IBM

Base current-Peak (tp<5 ms)

4

A

PT

Total power dissipation

TC=25℃

70

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-C

Thermal resistance from junction to case

1.78

℃/W

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BUL742 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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