N0100P datasheet(4/8 Pages) RENESAS

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Data Sheet D20203EJ1V0DS

N0100P

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS =

−12 V, VGS = 0 V

−10

μA

Gate Leakage Current

IGSS

VGS = m8 V, VDS = 0 V

m10

μA

Gate to Source Cut-off Voltage

VGS(off)

VDS =

−10 V, ID = −1.0 mA

−0.45

−1.5

Forward Transfer AdmittanceNote

| yfs |

VDS =

−10 V, ID = −2.0 A

Drain to Source On-state ResistanceNote

RDS(on)1

VGS =

−4.5 V, ID = −2.0 A

RDS(on)2

VGS =

−3.0 V, ID = −2.0 A

RDS(on)3

VGS =

−2.5 V, ID = −2.0 A

RDS(on)4

VGS =

−1.8 V, ID = −1.5 A

105

Input Capacitance

Ciss

VDS =

−10 V,

720

Output Capacitance

Coss

VGS = 0 V,

150

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

Turn-on Delay Time

td(on)

VDD =

−6 V, ID = −1.75 A,

Rise Time

VGS =

−4.5 V,

Turn-off Delay Time

td(off)

RG = 10

240

Fall Time

114

Total Gate Charge

VDD =

−10 V,

8.3

Gate to Source Charge

QGS

VGS =

−4.5 V,

1.3

Gate to Drain Charge

QGD

ID =

−3.5 A

2.1

Body Diode Forward VoltageNote

VF(S-D)

IF = 3.5 A, VGS = 0 V

0.84

Reverse Recovery Time

Trr

IF = 3.5 A, VGS = 0 V,

270

Reverse Recovery Charge

Qrr

di/dt = 50 A/

μs

300

Note Pulsed

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

VGS (−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

PG.

D.U.T.

VDD

IG =

−2 mA

VGS

Wave Form

VDS

Wave Form

VGS (−)

VDS (−)

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

VGS

Wave Form

VDS

Wave Form

VGS (−)

VDS (−)

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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