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N0100P Datasheet(PDF) 7 Page - Renesas Technology Corp |
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N0100P Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 8 page ![]() Data Sheet D20203EJ1V0DS 5 N0100P DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 0 10 20 30 40 50 60 70 80 90 100 -0.1 -1 -10 -100 VGS = –1.8 V –4.5 V Pulsed –3.0 V –2.5 V ID - Drain Current - A 1 10 100 1000 -0.1 -1 -10 -100 VDD = –6 V VGS = –4.5 V RG = 10 Ω td(off) tf tr td(on) ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 100 1000 10000 -0.1 -1 -10 -100 Ciss Coss Crss VGS = 0 V f = 1 MHz VDS - Drain to Source Voltage - V -0.01 -0.1 -1 -10 -100 0.0 0.5 1.0 1.5 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 0 -1 -2 -3 -4 -5 -6 -7 012345 6 789 10 11 12 ID = –3.5 A VDD = –10 V –6 V QG - Gate Change - nC |
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