ILQ3 datasheet(2/2 Pages) SIEMENS

Part #	ILQ3

Description	PHOTOTRANSISTOR OPTOCOUPLER

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 2 page

5–159

ILD/Q3

Characteristics

Emitter (IR GaAs)

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Forward Voltage

1.25

1.65

IF=60 mA

Reverse Current

0.01

µAVR=6 V

Capacitance

VR=0 V, f=1 MHz

Thermal Resistance, Junction to Lead

RTHJL

750

°C/W

Detector

Collector-Emitter Leakage Current

ICEO

570

VCE=15 V

Capacitance

CCE

6.8

VCE=5 V, f=1 MHz

Thermal Resistance, Junction to Lead

RTHJL

500

°C/W

Package Transfer Characteristics (Each Channel)

Saturated Current Transfer Ratio, ILD/Q3-1

CTRSAT

300

IF=1.6 mA, VCE=0.4 V

Saturated Current Transfer Ratio, ILD/Q3-2

CTRSAT

100

IF=1.0 mA, VCE=0.4 V

Common Mode Rejection Output High

CMH

5000

µsV

CM=50 VP-P, RL=10 kΩ,

IF=0 mA

Common Mode Rejection Output Low

CML

5000

µsV

CM=50 VP-P, RL=10 kΩ,

IF=0 mA

Common Mode Coupling Capacitance

CCM

0.01

Package Capacitance

CIO

0.8

VIO=0 V, f=1 MHz

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