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IS63WV1288DALL/DALS Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS63WV1288DALL/DALS
Description  128K x 8 HIGH-SPEED CMOS STATIC RAM
PDF  20 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS63WV1288DALL/DALS Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/15/2011
IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)
 
 
-8 ns 
-10 ns 
-12 ns 
  Symbol 
Parameter 
 
 
Min. 
Max. 
Min. 
Max. 
Min. 
Max. 
Unit
twc
WriteCycleTime
8
—
10
—
12
—
ns
tsce
CE
toWriteEnd
7
—
7
—
8
—
ns
tAw
AddressSetupTimeto
8
—
8
—
8
—
ns
WriteEnd
thA
AddressHoldfrom
0
—
0
—
0
—
ns
WriteEnd
tsA
AddressSetupTime
0
—
0
—
0
—
ns
tPwe
1
(1)
WE
PulseWidth(OE High)
7
—
7
—
8
—
ns
tPwe
2
(2)
WE
PulseWidth(OE Low)
8
—
10
—
12
—
ns
tsd
DataSetuptoWriteEnd
5
—
5
—
6
—
ns
thd
DataHoldfromWriteEnd
0
—
0
—
0
—
ns
thzwe(2)
WE
LOWtoHigh-ZOutput
—
4
—
5
—
6
ns
tlzwe(2)
WE
HIGHtoLow-ZOutput
3
—
3
—
3
—
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0to3.0Vand
outputloadingspecifiedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. TheinternalwritetimeisdefinedbytheoverlapofCELOWandWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,
butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfalling
edgeofthesignalthatterminatestheWrite.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverOperatingRange)
   
              
 
 -20 ns  
 -25 ns  
 -35 ns 
 -45ns
  Symbol  Parameter 
  Min.    Max. 
Min.    Max. 
Min.   Max. 
Min.    Max. 
Unit
twc
WriteCycleTime
20—
25—
35—
45—
ns
tsce
CE
toWriteEnd
12—
18—
25—
35—
ns
tAw
AddressSetupTime
12—
15—
25—
35—
ns
toWriteEnd
thA
AddressHoldfromWriteEnd0—
0—
0—
0—
ns
tsA
AddressSetupTime
0—
0—
0—
0—
ns
tPwe1
WE
PulseWidth(OE=HIGH)12—
18—
30—
35—
ns
tPwe2
WE
PulseWidth(OE=LOW)17—
20—
30—
35—
ns
tsd
DataSetuptoWriteEnd
9—
12—
15—
20—
ns
thd
DataHoldfromWriteEnd
0—
0—
0—
0—
ns
thzwe(3) WELOWtoHigh-ZOutput
—9
—12
—20
—20
ns
tlzwe(3) WEHIGHtoLow-ZOutput
3—
5—
5—
5—
ns
Notes:
1. TestconditionsforIS61WV6416LLassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulse
levelsof0.4VtoVdd-0.3VandoutputloadingspecifiedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. TheinternalwritetimeisdefinedbytheoverlapofCELOWandUBorLB,andWELOW.Allsignalsmustbeinvalidstatesto
initiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtothe
risingorfallingedgeofthesignalthatterminatesthewrite.



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