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SSM5H06FE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM5H06FE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM5H06FE 2007-11-01 4 Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 1mA ⎯ 0.18 ⎯ V VF (2) IF = 5mA ⎯ 0.23 0.30 V Forward voltage VF (3) IF = 100mA ⎯ 0.35 0.50 V Reverse current IR VR = 12 V ⎯ ⎯ 22 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 20 40 pF Precaution The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. This current leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design and safety design. |
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