SSM5H06FE datasheet(3/8 Pages) TOSHIBA

3 / 8 page

SSM5H06FE

2007-11-01

MOSFET

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0

⎯

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.6

⎯

1.1

Forward transfer admittance

⏐Yfs⏐

VDS = 3 V, ID = 10 mA

⎯

ID = 10 mA, VGS = 4 V

⎯

1.5

3.0

ID = 10 mA, VGS = 2.5 V

⎯

2.2

4.0

Drain-Source on-resistance

RDS (ON)

ID = 1 mA, VGS = 1.5 V

⎯

5.2

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

9.3

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

4.5

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

9.8

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 10 mA,

VGS = 0~2.5 V

⎯

125

⎯

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when the low operating current value is ID

100

μA

for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a

lower voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration when using the device.

(b) VIN

ton

90%

10%

0 V

2.5 V

10%

90%

toff

VDD

VDS (ON)

VDD = 3 V

Duty <

= 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

VDD

OUT

2.5 V

μs

(a) Test circuit

SSM5H06FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

SSM5H06FE Datasheet(HTML) 3 Page - Toshiba Semiconductor

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