November 2011

Doc ID 010029 Rev 2

1/18

18

STRH8N10

Rad-Hard N-channel 100 V, 6 A

Power MOSFET

Features

Applications

Description

This N-channel Power MOSFET is developed with

has specifically been designed to sustain high

TID and provide immunity to heavy ion effects.

Figure 1.

Internal schematic diagram

Note:

Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

100 V

6 A

0.30

Ω

22 nC

TO-39

Table 1.

Device summary

Order code

ESCC part

number

Quality

level

Package

Lead

finish

Mass

(g)

Temp. range

EPPL

STRH8N10N1

-

Engineering

model

TO-39

Gold

1.2

-55 to 150°C

-

STRH8N10NG

TBD

ESCC flight

Target

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