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EMIF06-MSD04F3 Datasheet(PDF) 3 Page - STMicroelectronics |
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EMIF06-MSD04F3 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() EMIF06-MSD04F3 Characteristics Doc ID 018849 Rev 1 3/9 Table 3. Electrical characteristic Symbol Parameter Test conditions Min. Typ. Max. Unit VBR Breakdown voltage IR = 1 mA 14 16 V IRM Leakage current at VRM VRM = 3 V 0.1 µA R1, R2, R3, R4, R5, R6 Serial resistance Tolerance ±10 %, matching ±2 % 36 40 44 Ω R7, R8, R9, R10, R11 Pull-up resistance Tolerance ±20 %, matching ±2 % 20 25 30 k Ω Cline Data line capacitance V = 1.8 V, F = 10 MHz, VOSC = 30 mV 7.5 10 pF V = 2.9 V, F = 10 MHz, VOSC = 30 mV 9 F0 Cut-off frequency S21 = -3 dB 550 MHz tR,tF Rise and fall time Cload = 10 pF, low-ref = 0.58 V, high-ref = 1.27 V 0.98 ns Figure 3. S21 attenuation measurements Figure 4. Analog crosstalk measurements 100k 1M 10M 100M 1G -30 -25 -20 -15 -10 -5 0 Clk Dat0 Dat1 Dat2 Dat3 Cmd F (Hz) S21 (dB) 100k 1M 10M 100M 1G -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 Clk-Dat0 Dat3-SDDat0 F (Hz) dB |
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