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ACT8934A Datasheet(PDF) 21 Page - Active-Semi, Inc |
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ACT8934A Datasheet(HTML) 21 Page - Active-Semi, Inc |
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21 / 45 page ![]() ACT8934A Rev 1, 22-Oct-12 Copyright © 2012 Active-Semi, Inc. Innovative Power TM ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. - 21 - www.active-semi.com Push-Button Response (First Power-Up) (TA = 25°C, unless otherwise specified.) REG1 Efficiency vs. Output Current Output Current (mA) 1 10 100 1000 REG2 Efficiency vs. Output Current 100 80 60 40 20 0 Output Current (mA) 1 10 100 1000 100 80 60 40 20 0 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D CH1 CH2 CH3 nPBIN Resistor = 50kΩ VOUT = 3.3V VOUT = 1.8V CH1: VnPBIN, 2V/div CH2: VnPBSTAT, 2V/div CH3: VnRSTO, 2V/div TIME: 50ms/div VIN = 3.6V VIN = 4.2V VIN = 5.0V VIN = 3.6V VIN = 4.2V VIN = 5.0V Warm Reset (Reset button pressed less than 130ms) CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω Cold Reset (Reset button pressed longer than 130ms, less than 260ms) CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω Cold Reset (Reset button pressed longer than 260ms) CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω |
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