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STP10P6F6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP10P6F6 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STD10P6F6, STP10P6F6 Electrical ratings Doc ID 022967 Rev 2 3/15 1 Electrical ratings Warning: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) 1. Limited by wire bonding Drain current (continuous) at TC = 25 °C 10 A ID Drain current (continuous) at TC = 100 °C 7.2 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 40 A PTOT Total dissipation at TC = 25 °C 35 W Derating factor 0.23 W/°C Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220 Rthj-case Thermal resistance junction-case max 4.29 °C/W Rthj-amb Thermal resistance junction-ambient max 100 62.5 °C/W Tl Maximum lead temperature for soldering purpose 275 300 °C |
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