STP10P6F6 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STP10P6F6

Description	P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Electrical characteristics

STD10P6F6, STP10P6F6

4/15

Doc ID 022967 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Warning:

For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 60 V

VDS = 60 V, Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5 A

0.15

0.18

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 48 V, f=1 MHz,

VGS = 0

360

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48V, ID = 10 A

VGS = 10 V

Figure 3

1.4

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