ACE4409B datasheet(2/6 Pages) ACE

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ACE4409B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-15A

VGS=-4.5V, ID=-10A

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1

-1.3

-2

Forward Transconductance

gFS

VGS=-5V, ID=-15A

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.71

-1

Maximum Body-Diode Continuous

Current

-2.7

Switching

Total Gate Charge

VDS=-15V, ID=-15A

VGS=-10V

37.08

48.2

Gate-Source Charge

Qgs

10.12

13.16

Gate-Drain Charge

Qgd

11.24

14.61

Turn-On Delay Time

Td(on)

VDS=-15V, RL=15Ω,

VGS=-10V, RGEN=6Ω

19.52

39.04

Turn-On Rise Time

10.12

20.34

Turn-Off Delay Time

td(off)

137.6

275.2

Turn-Off Fall Time

55.32

110.64

Dynamic

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1MHz

3887.7

Output Capacitance

Coss

577.33

Reverse Transfer Capacitance

Crss

42.72

Note: 1. The value of R

θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

ACE4409B Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

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