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ACE4409B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4409B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE4409B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE4409B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features V DS(V)=-30V I D=-14A (VGS=-10V) R DS(ON)<11mΩ (VGS=-10V) R DS(ON)<13mΩ (VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) * AC TA=25 OC ID -14 A TA=70 OC -11 Drain Current (Pulse) * B IDM -70 Power Dissipation TA=25 OC PD 3 W TA=70 OC 2.1 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 Ordering information ACE4409B XX + H FM : SOP-8 Pb - free Halogen - free |
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