ACE9926B datasheet(2/7 Pages) ACE

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ACE9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE9926B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

100

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=6A

mΩ

VGS=2.5V, ID=5.2A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.65

0.78

Forward Transconductance

gFS

VDS=5V, ID=6A

Diode Forward Voltage

VSD

VGS=0V, ISD=1.7A

0.8

1.0

Maximum Body-Diode Continuous

Current

1.7

Switching

Total Gate Charge

VDS=10V, VGS=4.5V,

ID=6A

6.24

8.11

Gate-Source Charge

Qgs

1.64

2.13

Gate-Drain Charge

Qgd

1.34

1.74

Turn-On Delay Time

td(on)

VGS=4.5V, VDS=10V,

RL=10Ω, RGEN=6Ω

10.4

20.8

Turn-On Rise Time

4.4

8.8

Turn-Off Delay Time

td(off)

27.36

54.72

Turn- Off Rise Time

4.16

8.32

Dynamic

Input Capacitance

Ciss

VDS=8V, VGS=0V

f=1MHz

522.3

Output Capacitance

Coss

98.48

Reverse Transfer Capacitance

Crss

74.69

Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

FM : SOP-8

Pb - free

Halogen - free

ACE9926B Datasheet(PDF) 2 Page - ACE Technology Co., LTD.

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