ACE9926B datasheet(1/7 Pages) ACE

Part #	ACE9926B

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used

individually, in parallel or to form a bidirectional blocking switch.

Features

 V

DS

(V)=20V

 I

D=6A (VGS=4.5V)

 R

DS(ON)

<30m

Ω (V

GS=4.5V)

 R

DS(ON)

<40

mΩ (V

GS=2.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous) * AC

TA=25

OC

ID

6

A

TA=70

OC

5

Drain Current (Pulse) * B

IDM

24

A

Power Dissipation

TA=25

OC

PD

2

W

TA=70

OC

1.3

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

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ACE9926B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE9926B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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